The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. 

Features:-

• As a remote variable resistor 

• ≤ 100Ω to ≥ 300 MΩ 

• ≥ 99.9% linearity 

• ≤ 15 pF shunt capacitance 

• ≥ 100 GΩ I/O isolation resistance As an analog switch 

• Extremely low offset voltage 

• 60 Vpk-pk signal capability 

• No charge injection or latch-up 

• ton, toff ≤ 15 µS 

• UL recognized (File #E90700) 

• VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300)  

Applications:-

• As a variable resistor-

    Isolated variable attenuator 

    Automatic gain control 

    Active filter fine tuning/band switching 

• As an analog switch-

    Isolated sample and hold circuit 

    Multiplexed, optically isolated A/D conversion 

Specification:-

Related Document:-

 H11F1 IC Data Sheet