Flat 10% Off on Prepaid Orders, Apply Coupon  GET10  to get Instant 10% Discount
  • G60N100BNTD IGBT - 1000V 60A N-Channel IGBT

The G60N100B2TD is a  1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. 

Applications:-

UPS, Welder 

Features:-

• High Speed Switching 

• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A

• High Input Impedance 

• Built-in Fast Recovery Diode  

Specification:-

Symbol Parameter Ratings Units
VCES Collector-emitter voltage 1000 V
VGES DC collector curren ±25 V
IC Collector Current @ TC = 25°C 60 A
Collector Current @ TC = 100°C 42
ICM Pulsed Collector Current 200 A
IF Diode Continuous Forward Current @ TC =100°C 15 A
PD Maximum Power Dissipation @ TC = 25°C 180 W
Maximum Power Dissipation @ TC = 100°C 72
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temp. for Soldering Purposes 300 °C


Related Document
:-

G60N100BNTD IGBT Data Sheet

Brand/Manufacturer Generic
Country Of Origin China
Packer / Importer Address Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India.
MRP Rs. 383.5 (Inclusive of all Taxes)
Write a review
Please login or register to review

* Product Images are shown for illustrative purposes only and may differ from actual product.

G60N100BNTD IGBT - 1000V 60A N-Channel IGBT

  • Product Code: EC-1980
  • Availability: 396
  • Rs.325.00
  • (Excluding 18% GST)

OR

For all Bulk & B2B Product Enquiries Kindly share your requirement at care@electronicscomp.com