IRF1405 stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features:-
• Advanced process technology
• Ultra low on-resistance
• Dynamic dv/dt rating
• Fast switching
• Repetitive avalanche allowed up to Tjmax
• Lead-free
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current (Id) | 169A |
| Drain-Source Resistance (Rds On) | 5.3mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 260 nC |
| Operating Temperature Range | -55 - 175°C |
| Power Dissipation (Pd) | 330W |
Related Documents
| Brand/Manufacturer | Generic |
| Country Of Origin | China |
| Packer / Importer Address | Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India. |
| MRP | Rs. 84.96 (Inclusive of all Taxes) |
* Product Images are shown for illustrative purposes only and may differ from actual product.
IRF1405 MOSFET - 55V 169A N-Channel HEXFET Power MOSFET TO-220 Package
- Product Code: EC-1887
- Availability: 898
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Rs.99.00
- (Excluding 18% GST)