This N-Channel 2.5V specified MOSFET is produced advanced Power Trench process that has been especially tailored to minimize theon-state resistance and yet maintain low gate charge for superior switching performance.
Features:-
- 3 A, 20 V.
RDS(ON) = 0.035 Ω @ VGS = 4.5V
RDS(ON) = 0.050 Ω @ VGS = 2.5V
- Low gate charge (7nC typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High power and current handling capability
Applications:-
- DC/DC converter
- Load switch
Specifications:-
- Drain-Source Voltage: 20V
- Gate-Source Voltage: ±8V
- Drain Current – Continuous: 3A
- Drain Current – Pulsed: 20A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
Package Includes:-
1 x FDN339N MOSFET - (SMD SOT-23 Package) - 20V 3A N-Channel MOSFET
| Brand/Manufacturer | |
| Country Of Origin | |
| Packer / Importer Address | Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India. |
| MRP | Rs. 16.52 (Inclusive of all Taxes) |
* Product Images are shown for illustrative purposes only and may differ from actual product.
FDN339N MOSFET - (SMD SOT-23 Package) - 20V 3A N-Channel MOSFET
- Product Code: EC-11377
- Availability: 2250
-
Rs.14.00
- (Excluding 18% GST)