MMBT5551 NPN High Voltage transistor comes in Surface-Mounted Device SMD SOT-23 plastic package.

Specifications:-

• Product Category: Bipolar Transistors - BJT 
• Mounting Style: SMD/SMT 
• Package/Case: SOT-23-3 
• Transistor Polarity: NPN 
• Configuration: Single 
• Collector- Emitter Voltage VCEO Max: 160 V 
• Collector- Base Voltage VCBO: 180 V 
• Emitter- Base Voltage VEBO: 6 V 
• Maximum DC Collector Current: 0.6 A 
• Gain Bandwidth Product fT: 300 MHz 
• Maximum Operating Temperature: + 150 C 
• Series: MMBT5551 
• Continuous Collector Current: 0.6 A  
• DC Collector/Base Gain hFE Min: 80 at 1 mA at 5 V, 80 at 10 mA at 5 V, 30 at 50 mA at 5 V  
• Minimum Operating Temperature: - 55 C  
• Pd - Power Dissipation: 300 mW