This P-Channel 2.6V specified MOSFET uses advanced low voltage Power Trench process. It has been optimised for battery power management applications.

Features:-

• -2.4 A, -20 V.

                    RDS(ON) = 40 mΩ @ VGS = -4.5V

                    RDS(ON) = 50 mΩ @ VGS = -2.5V

                    RDS(ON) = 80 mΩ @ VGS = -1.8V

• Fast Switching Speed
• High Performance Trench Technology for Extremely Low RDS(ON)
• Super SOT-23 provides Low RDS(ON) and 30% Higher Power
• Handling Capability than SOT23 in the same Footprint
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications:-

• Battery management
• Load switch
• Battery protection

Specifications:-

• Drain-Source Voltage:  -12V
• Gate-Source Voltage: ±8V
• Drain Current – Continuous: -2.6A
• Drain Current – Pulsed: -10A
• Maximum Power Dissipation: 0.5-0.46W
• Operating and Storage Junction Temperature Range: -55 to +150°C

Package Includes:-

1 x FDN306P MOSFET - (SMD SOT-23 Package) - 12V 2.6A P-Channel MOSFET