IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Compliant to RoHS directive 2002/95/EC
Detailed Specifications
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Drain-Source Breakdown Voltage (Vds) | 100V |
Continuous Drain Current (Id) | 33A |
Drain-Source Resistance (Rds On) | 44mOhms |
Gate-Source Voltage (Vgs) | 20V |
Gate Charge (Qg) | 71 nC |
Operating Temperature Range | -55 - 175°C |
Power Dissipation (Pd) | 130W |
Related Documents
Brand/Manufacturer | Generic |
Country Of Origin | China |
Packer / Importer Address | Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India. |
MRP | Rs. 29.5 (Inclusive of all Taxes) |
* Product Images are shown for illustrative purposes only and may differ from actual product.
IRF540 MOSFET - 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package
- Product Code: EC-0300
- Availability: 5768
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Rs.25.00
- (Excluding 18% GST)