Insulated  Gate  Bipolar  Transistors  (IGBTs)  from  International  Rectifier  have higher  usable  current  densities  than  comparable  bipolar  transistors,  while  at the  same  time  having  simpler  gate-drive  requirements  of  the  familiar  power MOSFET.  They provide substantial benefits to a host of high-voltage, high-current  applications

Features :-

• Switching-loss  rating  includes  all  "tail"  losses
• Optimized  for  high  operating  frequency  (over 5kHz)  See Fig. 1 for Current vs. Frequency curve

Specifications :-

• Collector-to-Emitter  Breakdown  Voltage min : 500V
• Emitter-to-Collector  Breakdown  Voltage min : 20V
• Temperature  Coeff.  of  Breakdown  Voltage typ : 0.46V/°C
• Gate  Threshold  Voltage min : 3.0V
• Gate  Threshold  Voltage max : 5.5V
• Temperature  Coeff.  of  Threshold  Voltage typ : -11mV/°C
• Forward  Transconductance min : 2.3S
• Forward  Transconductance typ : 8.1S
• Gate-to-Emitter  Leakage  Current max : +100nA

Package Includes :-

1 X IRGB430U MOSFET - 500V 15A N- Channel Power MOSFET TO-220 Package