The LF356 device are the first monolithic JFET input operational amplifiers to incorporate well matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner. 

Features:-

1. Advantages 

– Replace Expensive Hybrid and Module FET Op Amps 

– Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices 

– Excellent for Low Noise Applications Using Either High or Low Source Impedance

—Very Low 1/f Corner 

– Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers 

– New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems 

– Internal Compensation and Large Differential Input Voltage Capability 

2. Common Features 

– Low Input Bias Current: 30 pA 

– Low Input Offset Current: 3 pA

 – High Input Impedance: 1012 Ω

 – Low Input Noise Current: 0.01 pA/√Hz 

– High Common-Mode Rejection Ratio: 100 dB 

– Large DC Voltage Gain: 106 dB

3. Uncommon Features 

– Extremely Fast Settling Time to 0.01%: 1.5 μs 

– Fast Slew Rate: 12 V/µs 

– Wide Gain Bandwidth: 5 MHz

 – Low Input Noise Voltage: 12 nV/√Hz 

Specification:-

Related Document:-

 LF356 IC Datasheet