These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input Impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally suited to a wide range of switching and amplifying applications where high break down voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Applications :-

• Motor control
• Converters
• Amplifiers
• Switches
• Power supply circuits
• Drivers (Relays, Hammers, Solenoids, Lamps,
• Memories, Displays, Bipolar Transistors, etc.)

Features :-

• Freedom from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Low Ciss and fast switching speeds
• Excellent thermal stability Integral Source-Drain diode
• High input impedance and high gain Complementary N- and P-Channel devices

Specifications :-

• Drain to Source Break Down Voltage Minimum : -60V
• Gate threshold voltage Min : -2.0V
• Gate threshold voltage Max : -4.0V
• ON-State drain Current Min : -5.0A

Package Includes :-

1 X IRF9523 MOSFET - 60V 5A P-Channel Power MOSFET TO-220 Package