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  • IRGB430U MOSFET - 500V 15A N- Channel Power MOSFET TO-220 Package

Insulated  Gate  Bipolar  Transistors  (IGBTs)  from  International  Rectifier  have higher  usable  current  densities  than  comparable  bipolar  transistors,  while  at the  same  time  having  simpler  gate-drive  requirements  of  the  familiar  power MOSFET.  They provide substantial benefits to a host of high-voltage, high-current  applications


Features :-

  • Switching-loss  rating  includes  all  "tail"  losses
  • Optimized  for  high  operating  frequency  (over 5kHz)  See Fig. 1 for Current vs. Frequency curve

Specifications :-

  • Collector-to-Emitter  Breakdown  Voltage min : 500V
  • Emitter-to-Collector  Breakdown  Voltage min : 20V
  • Temperature  Coeff.  of  Breakdown  Voltage typ : 0.46V/°C
  • Gate  Threshold  Voltage min : 3.0V
  • Gate  Threshold  Voltage max : 5.5V
  • Temperature  Coeff.  of  Threshold  Voltage typ : -11mV/°C
  • Forward  Transconductance min : 2.3S
  • Forward  Transconductance typ : 8.1S
  • Gate-to-Emitter  Leakage  Current max : +100nA


Package Includes :-

1 X IRGB430U MOSFET - 500V 15A N- Channel Power MOSFET TO-220 Package

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IRGB430U MOSFET - 500V 15A N- Channel Power MOSFET TO-220 Package

  • Product Code: EC-11137
  • Availability: 1680
  • Rs.135.00
  • (Excluding 18% GST)

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