Super SOT-23 N-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

• 2.2 A, 30 V
  

                    RDS(ON) = 0.065Ω @ VGS = 4.5V

                    RDS(ON) = 0.082Ω @ VGS = 2.5V

• Industry standard outline SOT-23 surface mount package using proprietary Super SOT-23 design for superior thermal and electrical capabilities.
• High density cell design for extremely low RDS(ON).
• Exceptional on-resistance and maximum DC current capability.

Specifications:-

• Drain-Source Voltage:  30V
• Gate-Source Voltage: ±20V
• Drain Current – Continuous: 2.2A
• Drain Current – Pulsed: 10A
• Maximum Power Dissipation: 0.5-0.46W
• Operating and Storage Junction Temperature Range: -55 to +150°C

Package Includes:-

1 x FDN337N MOSFET - (SMD SOT-23 Package) - 30V 2.2A N-Channel Logic Level Enhancement Mode MOSFET