Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

• -1.5 A, -30 V

                    RDS(ON) = 0.125Ω @ VGS = -10V

                    RDS(ON) = 0.20Ω @ VGS = -4.5V

• Low Gate Charge (7.2nC Typical)
• High Performance Trench Technology for Extremely Low RDS(ON)
• High Power Version of Industry Standard SOT−23 Package. Identical Pin−Out to SOT−23 with 30% Higher Power Handling Capability
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Specifications:-

• Drain-Source Voltage:  -30V
• Gate-Source Voltage: ±20V
• Drain Current – Continuous: -1.5A
• Drain Current – Pulsed: -5A
• Maximum Power Dissipation: 0.5-0.46W
• Operating and Storage Junction Temperature Range: -55 to +150°C

Package Includes:-

1 x FDN358P MOSFET - (SMD SOT-23 Package) - 30V 1.5A P-Channel Logic Level Enhancement Mode MOSFET