This P−Channel Logic Level MOSFET is produced uses advanced low voltage Power Trench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dc−dc conversion.

• -1.6 A, -20 V

                    RDS(ON) = 70 mΩ @ VGS = -4.5V

                    RDS(ON) = 110 mΩ @ VGS = -2.5V

• Low Gate Charge (7.2nC Typical)
• High Performance Trench Technology for Extremely Low RDS(ON)
• High Power Version of Industry Standard SOT−23 Package. Identical Pin−Out to SOT−23 with 30% Higher Power Handling Capability
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications:-

• Battery management
• Load switch
• Battery protection

Specifications:-

• Drain-Source Voltage:  -20V
• Gate-Source Voltage: ±8V
• Drain Current – Continuous: -2A
• Drain Current – Pulsed: -10A
• Maximum Power Dissipation: 0.5-0.46W
• Operating and Storage Junction Temperature Range: -55 to +150°C

Package Includes:-

1 x FDN340P MOSFET - (SMD SOT-23 Package) - 20V 2A P-Channel Logic Level MOSFET